DocumentCode :
2413165
Title :
Canary Replica Feedback for Near-DRV Standby VDD Scaling in a 90nm SRAM
Author :
Wang, Jiajing ; Calhoun, Benton H.
Author_Institution :
Virginia Univ., Charlottesville
fYear :
2007
fDate :
16-19 Sept. 2007
Firstpage :
29
Lastpage :
32
Abstract :
Canary bitcells act as online monitors in a feedback architecture to sense the proximity to the data retention voltage (DRV) for core SRAM bitcells during standby voltage scaling. This approach implements aggressive standby VDD scaling by tracking PVT variations and gives the flexibility to tradeoff between the safety of data and decreased leakage power. A 90 nm 128 Kb SRAM test chip confirms that the canary cells track changes in temperature and VDD and that they provide a reliable mechanism for protecting core cells in a closed loop VDD scaling system. Power savings improve by up to 30times compared with the conventional guard-banding approach.
Keywords :
SRAM chips; SRAM; canary bitcells; canary replica feedback; closed loop VDD scaling system; data retention voltage; leakage power; near-DRV standby VDD scaling; size 90 nm; standby leakage power reduction; standby voltage scaling; storage capacity 128 Kbit; Feedback circuits; Feedback loop; Flip-flops; Protection; Random access memory; Regulators; Safety; Tail; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2007. CICC '07. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-1623-3
Electronic_ISBN :
978-1-4244-1623-3
Type :
conf
DOI :
10.1109/CICC.2007.4405675
Filename :
4405675
Link To Document :
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