• DocumentCode
    2413165
  • Title

    Canary Replica Feedback for Near-DRV Standby VDD Scaling in a 90nm SRAM

  • Author

    Wang, Jiajing ; Calhoun, Benton H.

  • Author_Institution
    Virginia Univ., Charlottesville
  • fYear
    2007
  • fDate
    16-19 Sept. 2007
  • Firstpage
    29
  • Lastpage
    32
  • Abstract
    Canary bitcells act as online monitors in a feedback architecture to sense the proximity to the data retention voltage (DRV) for core SRAM bitcells during standby voltage scaling. This approach implements aggressive standby VDD scaling by tracking PVT variations and gives the flexibility to tradeoff between the safety of data and decreased leakage power. A 90 nm 128 Kb SRAM test chip confirms that the canary cells track changes in temperature and VDD and that they provide a reliable mechanism for protecting core cells in a closed loop VDD scaling system. Power savings improve by up to 30times compared with the conventional guard-banding approach.
  • Keywords
    SRAM chips; SRAM; canary bitcells; canary replica feedback; closed loop VDD scaling system; data retention voltage; leakage power; near-DRV standby VDD scaling; size 90 nm; standby leakage power reduction; standby voltage scaling; storage capacity 128 Kbit; Feedback circuits; Feedback loop; Flip-flops; Protection; Random access memory; Regulators; Safety; Tail; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2007. CICC '07. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-1623-3
  • Electronic_ISBN
    978-1-4244-1623-3
  • Type

    conf

  • DOI
    10.1109/CICC.2007.4405675
  • Filename
    4405675