Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology

We propose a flex-pass-gate SRAM (Flex-PG SRAM), i.e., a FinFET-based SRAM to enhance both the read and write static noise margins (SNMs) independently. The flip-flop in the Flex-PG SRAM consists of usual FinFETs while its pass gates consist of double-"independent"-gate FinFETs, four-terminal-FinFETs. A TCAD simulation revealed that the Flex-PG SRAM increases the read SNM by 70 mV even when its 6-sigma tolerance is ensured, without the cell size penalty and decrease in the write SNM.