DocumentCode :
2413194
Title :
Two-dimensional photonic crystals for GaN-based blue light emitters
Author :
Yoshie, T. ; Chuan-Cheng Cheng ; Scherer, A.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
fYear :
1998
fDate :
4-8 Oct. 1998
Firstpage :
189
Lastpage :
190
Abstract :
We successfully fabricated two-dimensional photonic crystal structures for III-nitride light emitters by integrating electron-beam lithography, xenon/chlorine-based chemically assisted ion beam etching and a multilayer pattern transfer.
Keywords :
III-V semiconductors; MOCVD; electron beam lithography; gallium compounds; ion beam applications; light emitting diodes; optical fabrication; optical materials; optical multilayers; photonic band gap; semiconductor lasers; sputter etching; vapour phase epitaxial growth; GaN; GaN-based blue light emitters; III-nitride light emitters; Xe/Cl/sub 2/-based chemically assisted ion beam etching; electron-beam lithography; fabrication; ion beam etching; multilayer pattern transfer; two-dimensional photonic crystals; Electron beams; Gallium nitride; Ion beams; Light emitting diodes; Lithography; Microcavities; Photonic crystals; Sputter etching; Stimulated emission; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
ISSN :
0899-9406
Print_ISBN :
0-7803-4223-2
Type :
conf
DOI :
10.1109/ISLC.1998.734200
Filename :
734200
Link To Document :
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