Title :
Gain calculations for localized excitons and biexcitons: (In,Ga)N versus (Zn,Cd)Se quantum wells
Author :
Wunsche, H.-J. ; Henneberger, F. ; Brandt, O. ; Bandelow, U. ; Kaiser, H.-C.
Author_Institution :
Inst. fur Phys., Humboldt-Univ., Berlin, Germany
Abstract :
We present a comparative theoretical study of the energy states and optical gain of inhomogeneously broadened localized excitons and biexcitons in (Zn,Cd)Se/ZnSe and (In,Ga)N/GaN quantum wells.
Keywords :
II-VI semiconductors; III-V semiconductors; biexcitons; binding energy; density functional theory; effective mass; electronic density of states; excitons; interface states; optical materials; photoluminescence; quantum well lasers; semiconductor heterojunctions; semiconductor quantum wells; (In,Ga)N quantum wells; (In,Ga)N/GaN quantum wells; (Zn,Cd)Se quantum wells; (Zn,Cd)Se/ZnSe quantum wells; InGaN; InGaN-GaN; ZnCdSe; ZnCdSe-ZnSe; energy states; inhomogeneously broadened localized biexcitons; inhomogeneously broadened localized excitons; localized biexcitons; localized excitons; optical gain; Charge carrier processes; Effective mass; Energy states; Excitons; Fluctuations; Gallium nitride; Linear discriminant analysis; Plasmas; Quantum mechanics; Zinc compounds;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734201
