DocumentCode
2413234
Title
Experimental and theoretical analysis of the temperature performance of high T/sub 0/ lasers on InGaAs ternary substrate
Author
Ishikawa, H. ; Otsubo, K. ; Shoji, H.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
195
Lastpage
196
Abstract
The temperature performance of 1.23 /spl mu/m strained quantum well lasers on InGaAs ternary substrate has been analyzed. The temperature dependence of the slope efficiency and T/sub 0/ are well explained by the suppressed carrier overflow and the Auger effects.
Keywords
Auger effect; III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum well lasers; substrates; 1.23 mum; AlInGaAs; AlInGaAs-InGaAs; Auger effect; InGaAs; InGaAs ternary substrate; high T/sub 0/ lasers; slope efficiency; strained quantum well lasers; suppressed carrier overflow; temperature dependence; temperature performance; Indium gallium arsenide; Laboratories; Laser theory; Optical losses; Performance analysis; Potential well; Quantum mechanics; Quantum well lasers; Temperature dependence; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734203
Filename
734203
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