DocumentCode
2413254
Title
Foreword
fYear
2008
fDate
17-19 June 2008
Abstract
The following topics are dealt with: FinFET and multigate MOSFET; advanced junction technology; nanowire FET; high-k/metal gate stack; Ge MOSFET; High-k/metal gate reliability; non volatile memory technology; NAND flash memory; trapped charge NVM; SOI; CMOS imager and high mobility devices.
Keywords
CMOS image sensors; MOSFET; flash memories; nanotechnology; semiconductor device reliability; semiconductor junctions; silicon-on-insulator; CMOS imager; FinFET; NAND flash memory; SOI; advanced junction technology; high mobility device; multigate MOSFET; nanowire FET; non volatile memory technology; CMOS technology; FinFETs; Logic gates; MOSFETs; Materials; Organizing; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2008 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-1802-2
Type
conf
DOI
10.1109/VLSIT.2008.4588541
Filename
4588541
Link To Document