Fabrication and modeling of optical interconnects using selective area growth metalorganic chemical vapor deposition

Author

Alam, M.A. ; People, R. ; Sputz, S.K. ; Hybertsen, M.S. ; Isaacs, E. ; Evans-Lutterodt, K. ; Vandenberg, J. ; Siegrist, T. ; Pernell, T.L. ; Lang, D.V. ; Chu, S.N.G. ; Johnson, J.E. ; Ketelsen, L.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

197

Lastpage

198

Abstract

A computational model for selective area growth has been verified using a comprehensive suite of experimental measurements: atomic force microscopy, optical interference microscopy, microphotoluminescence, and micro-Xray diffraction. The model then allows for constructive engineering of the material thickness and composition through manipulation of the oxide mask used in selective area growth. This can be a fundamental input to the design of optical interconnects and integrated photonic devices.

Keywords

MOCVD; X-ray diffraction; atomic force microscopy; integrated optics; integrated optoelectronics; light interference; optical fabrication; optical interconnections; optical microscopy; photoluminescence; atomic force microscopy; composition; computational model; constructive engineering; design; fabrication; integrated photonic devices; material thickness; micro-X-ray diffraction; microphotoluminescence; optical interconnects; optical interference microscopy; oxide mask; selective area growth; selective area growth metalorganic chemical vapor deposition; Area measurement; Atom optics; Atomic force microscopy; Atomic measurements; Computational modeling; Force measurement; Optical computing; Optical device fabrication; Optical interconnections; Optical microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734204

Filename

734204