Research of properties single crystals of sulphide cadmium with the preset photosensing properties

This work is devoted to research of the slow non-radiating recombination centers (R-centers) in low resistant single crystal samples of cadmium sulphide, grown with various parity ratio pressures of constituent components. The borders of a ratio of pressures of constituent components are established, within the limits of which the occurrence of the R-centers is most probable. The threshold energy of optical ionization of the centers is determined. Conclusions about the internal structural defects participation in R-center formation are made.