Title :
Three-dimensional stress engineering in FinFETs for mobility/on-current enhancement and gate current reduction
Author :
Saitoh, Masumi ; Kaneko, Akio ; Okano, Kimitoshi ; Kinoshita, Tomoko ; Inaba, Satoshi ; Toyoshima, Yoshiaki ; Uchida, Ken
Author_Institution :
Corp. R&D Center, Toshiba Corp., Yokohama
Abstract :
In this paper, the first systematic study of uniaxial stress effects on mobility (mu)/on-current (Ion) enhancement and gate current (Ig) reduction in FinFETs is described. We demonstrate for the first time that Ig of (110) side-surface pFinFETs is largely reduced by longitudinal compressive stress due to out-of-plane mass increase. (110) n/pFinFETs are superior to (100) FinFETs in terms of higher mu/Ion enhancement ratio by longitudinal strain and comparable/higher short-channel Idsat. Three-dimensional stress design in FinFETs including transverse and vertical stresses is proposed based on the understanding of stress effects beyond bulk piezoresistance.
Keywords :
MOSFET; compressive strength; electron mobility; piezoresistance; 3D stress engineering; FinFET; bulk piezoresistance; gate current reduction; longitudinal compressive stress; mobility/on-current enhancement; transverse stress; uniaxial stress effects; vertical stress; Capacitive sensors; Compressive stress; FETs; FinFETs; Large scale integration; Piezoresistance; Scattering; Strain measurement; Tensile strain; Tensile stress;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588547
