• DocumentCode
    2413406
  • Title

    Experimental study of single source-heterojunction MOS transistors (SHOTs) under quasi-ballistic transport

  • Author

    Mizuno, T. ; Moriyama, Y. ; Tezuka, T. ; Sugiyama, N. ; Takagi, S.

  • Author_Institution
    MIRAI-AIST, Kawasaki
  • fYear
    2008
  • fDate
    17-19 June 2008
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    In this study, we have experimentally demonstrated the high performance of the single source heterojunction MOSFETs (SHOTs) without the energy spike of the drain heterojuction. We have studied the influence of the drain energy spike on the MOSFET performance. Moreover, we have clarified the physical mechanism for the high velocity electron injection in SHOTs, through the lattice temperature dependence of the electron velocity, comparing with that of strained-SOIs (SSOIs).
  • Keywords
    MOSFET; system-on-chip; drain heterojuction; energy spike; quasiballistic transport; single source heterojunction MOSFET; single source-heterojunction MOS transistors; strained-SOI; Electron mobility; Heterojunctions; Kinetic energy; Lattices; MOSFETs; Phonons; Rapid thermal processing; Scattering; Temperature dependence; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2008 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1802-2
  • Electronic_ISBN
    978-1-4244-1803-9
  • Type

    conf

  • DOI
    10.1109/VLSIT.2008.4588548
  • Filename
    4588548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2413406