Title :
Experimental study of single source-heterojunction MOS transistors (SHOTs) under quasi-ballistic transport
Author :
Mizuno, T. ; Moriyama, Y. ; Tezuka, T. ; Sugiyama, N. ; Takagi, S.
Author_Institution :
MIRAI-AIST, Kawasaki
Abstract :
In this study, we have experimentally demonstrated the high performance of the single source heterojunction MOSFETs (SHOTs) without the energy spike of the drain heterojuction. We have studied the influence of the drain energy spike on the MOSFET performance. Moreover, we have clarified the physical mechanism for the high velocity electron injection in SHOTs, through the lattice temperature dependence of the electron velocity, comparing with that of strained-SOIs (SSOIs).
Keywords :
MOSFET; system-on-chip; drain heterojuction; energy spike; quasiballistic transport; single source heterojunction MOSFET; single source-heterojunction MOS transistors; strained-SOI; Electron mobility; Heterojunctions; Kinetic energy; Lattices; MOSFETs; Phonons; Rapid thermal processing; Scattering; Temperature dependence; Tunneling;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588548
