Electroluminescence, photoconductivity and lasing studies of quantum wire lasers with spatial resolution of 0.1 /spl mu/m

Author

Ben-Ami, U. ; Nagar, Reetika ; Ben-Ami, N. ; Scheuer, J. ; Orenstein, M. ; Eisenstein, G. ; Lewis, A. ; Kapon, Eli ; Reinhardt, F. ; Ils, P. ; Gustafsson, A.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

215

Lastpage

216

Abstract

V-grooved quantum wire (QWR) lasers were studied by near-field optical microscopy with 0.1 /spl mu/m spatial resolution. We mapped the electroluminescence from the quantum structures and measured the lasing mode evolution. Localized photocurrent measurements show spectral features consistent with the QWR lateral confinement.

Keywords

III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; laser modes; near-field scanning optical microscopy; optical testing; photoconductivity; quantum well lasers; semiconductor device testing; semiconductor quantum wires; GaAs-AlGaAs; V-grooved quantum wire lasers; electroluminescence; lasing mode evolution; lasing studies; lateral confinement; localized photocurrent measurements; near-field optical microscopy; photoconductivity; quantum structures; quantum wire lasers; spatial resolution; spectral features; Electroluminescence; Laser modes; Laser theory; Optical microscopy; Optical waveguides; Photoconductivity; Quantum well lasers; Spatial resolution; Waveguide lasers; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734212

Filename

734212