• DocumentCode
    2413526
  • Title

    Quantum cascade lasers: from band structure engineering to applications

  • Author

    Capasso, F.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1998
  • fDate
    4-8 Oct. 1998
  • Firstpage
    223
  • Lastpage
    224
  • Abstract
    Quantum cascade (QC) lasers are fundamentally new semiconductor light sources in that: (1) their wavelength can be tailored over a wide range (from 3.4 /spl mu/m to 17 /spl mu/m) using the same combination of materials by a suitable choice of the active layer thicknesses (a few nanometers), (2) their optical power is greatly enhanced by the cascade effect (one injected electron creates 25-30 photons in traversing the active region). They are a textbook case of band structure engineering since all key microscopic properties (energy levels, radiative and non radiative matrix elements and their corresponding lifetimes, etc.) are designed "bottom-up" to optimize material and device performance.
  • Keywords
    laser theory; laser transitions; optimisation; photonic band gap; quantum well lasers; 3.4 to 17 mum; active layer thicknesses; active region; band structure engineering; cascade effect; energy levels; injected electron; lifetimes; microscopic properties; non radiative matrix elements; optical power; quantum cascade lasers; semiconductor light sources; Design engineering; Electron optics; Light sources; Microscopy; Optical materials; Power engineering and energy; Power lasers; Quantum cascade lasers; Semiconductor lasers; Semiconductor materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
  • Conference_Location
    Nara, Japan
  • ISSN
    0899-9406
  • Print_ISBN
    0-7803-4223-2
  • Type

    conf

  • DOI
    10.1109/ISLC.1998.734216
  • Filename
    734216