Title :
A 10 Gb/s optical heterodyne detection experiment using a 23 GHz bandwidth balanced receiver
Author :
Takachio, Noboru ; Iwashita, Katsushi ; Hata, Susumu ; Katsura, Kohsuke ; Onodera, Kiyomitsu ; Kikuchi, Hiroyuki
Author_Institution :
NTT Lab., Kanagawa, Japan
Abstract :
A 0.5-30-GHz GaAs MESFET monolithic distributed amplifier using coplanar waveguides and a wideband InGaAs twin p-i-n photodiode was fabricated. A wideband balanced optical receiver was fabricated by connecting these devices using the solder bump flip-chip technique to reduce parasitic inductance and capacitance. A 10-Gb/s optical continuous-phase frequency shift keying (CPFSK) heterodyne detection experiment was conducted using the balanced optical receiver. A multielectrode 1.55- mu m distributed feedback laser diode (DFB-LD) was directly modulated with a 10-Gb/s NRZ signal. The 10-Gb/s modulation signal was multiplexed with a 5-Gb/s RZ fixed pattern having a delay of several bits. the LD frequency modulation bandwidth was 12 GHz, and the modulation index was 0.52. The modulation signal was combined with a local oscillator light, and the combined signals were detected with the receiver. The IF center frequency was 13 GHz. The IF signal was demodulated by a differential detector. The demodulated eye pattern was degraded by the frequency bandwidth limitation of the mixer used in this experiment and the optical receiver frequency response. A wideband mixer and improved optical receiver packaging are needed.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; flip-chip devices; gallium arsenide; indium compounds; microwave amplifiers; optical communication equipment; p-i-n diodes; photodiodes; receivers; 0.5 to 30 GHz; 1.55 micron; 10 Gbit/s; 23 GHz; CPFSK; DFB-LD; GaAs; GaAs MESFET monolithic distributed amplifier; IF center frequency; InGaAs; LD frequency modulation bandwidth; NRZ signal; SHF; UHF; continuous-phase frequency shift keying; coplanar waveguides; demodulated eye pattern; differential detector; directly modulated; distributed feedback laser diode; frequency bandwidth limitation; local oscillator light; modulation index; optical heterodyne detection experiment; optical receiver packaging; parasitic capacitance reduction; parasitic induction reduction; semiconductors; solder bump flip-chip technique; wideband InGaAs twin p-i-n photodiode; wideband balanced optical receiver; wideband mixer; Bandwidth; Frequency; Optical detectors; Optical feedback; Optical mixing; Optical modulation; Optical receivers; Optical waveguides; Stimulated emission; Wideband;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99544