Title :
Single metal/single dielectric gate stack realizing triple effective workfunction for embedded memory application
Author :
Manabe, Kenzo ; Masuzaki, Koji ; Ogura, Takashi ; Nakagawa, Takashi ; Saitoh, Motofumi ; Sunamura, Hiroshi ; Tatsumi, Toru ; Watanabe, Hirohito
Author_Institution :
Device Platforms Res. Labs., NEC Corp., Sagamihara
Abstract :
We demonstrate midgap and band-edge effective workfunctions (EWFs) control with simple metal gate process scheme (single metal gate/single gate dielectric), using impurity-segregated NiSi2/SiON structure for embedded memory application. The application of midgap and band-edge EWF enables us to lower power consumption in SRAM and logic devices by 30% and 15% compared to poly-Si devices, respectively, due to reduced channel impurity concentration, suppressed gate depletion and high carrier mobility. These results show that NiSi2/SiON stack is one of the most promising candidates for future system on chip (SoC) devices with embedded memory.
Keywords :
SRAM chips; carrier mobility; dielectric materials; logic devices; nickel compounds; silicon compounds; system-on-chip; work function; NiSi2-SiON; SRAM devices; carrier mobility; embedded memory; impurity-segregated structure; logic devices; lower power consumption; single dielectric gate stack; single metal gate; system on chip devices; triple effective workfunction; CMOSFET logic devices; Dielectrics; Doping; Electrodes; Energy consumption; FETs; Fluctuations; Logic devices; MOSFET circuits; Random access memory;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588558
