CW and dynamic stable polarized light emission from VCSELs grown on [311]B substrate by MOCVD

Author

Uenohara, H. ; Tateno, K. ; Kagawa, T. ; Tsuda, H. ; Ohiso, Y. ; Kurokawa, T. ; Amano, C.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

235

Lastpage

236

Abstract

Stable polarized light emission from VCSELs grown on [311]B substrates by MOCVD has been achieved under CW and dynamic operations, in contrast with VCSELs on [100] substrates. A polarization extinction ratio of 9 dB under zero-biased modulation was obtained. The fabricated VCSELs consisted of Si-doped DBR, three GaAs/AlGaAs quantum well active region sandwiched between one-wavelength thick AlGaAs spacer layers, and a C-doped DBR.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser beams; laser cavity resonators; optical fabrication; optical modulation; quantum well lasers; substrates; surface emitting lasers; AlGaAs spacer layers; C-doped DBR; CW operation; CW polarized light emission; GaAs-AlGaAs; GaAs/AlGaAs quantum well active region; MOCVD; Si-doped DBR; VCSELs; [100] substrates; [311]B substrate; dynamic operations; dynamic stable polarized light emission; polarization extinction ratio; stable polarized light emission; zero-biased modulation; Anisotropic magnetoresistance; Bit error rate; Distributed Bragg reflectors; Extinction ratio; MOCVD; Optical fiber polarization; Optical polarization; Optical pulses; Quantum well devices; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734221

Filename

734221