Title :
CW and dynamic stable polarized light emission from VCSELs grown on [311]B substrate by MOCVD
Author :
Uenohara, H. ; Tateno, K. ; Kagawa, T. ; Tsuda, H. ; Ohiso, Y. ; Kurokawa, T. ; Amano, C.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
Stable polarized light emission from VCSELs grown on [311]B substrates by MOCVD has been achieved under CW and dynamic operations, in contrast with VCSELs on [100] substrates. A polarization extinction ratio of 9 dB under zero-biased modulation was obtained. The fabricated VCSELs consisted of Si-doped DBR, three GaAs/AlGaAs quantum well active region sandwiched between one-wavelength thick AlGaAs spacer layers, and a C-doped DBR.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser beams; laser cavity resonators; optical fabrication; optical modulation; quantum well lasers; substrates; surface emitting lasers; AlGaAs spacer layers; C-doped DBR; CW operation; CW polarized light emission; GaAs-AlGaAs; GaAs/AlGaAs quantum well active region; MOCVD; Si-doped DBR; VCSELs; [100] substrates; [311]B substrate; dynamic operations; dynamic stable polarized light emission; polarization extinction ratio; stable polarized light emission; zero-biased modulation; Anisotropic magnetoresistance; Bit error rate; Distributed Bragg reflectors; Extinction ratio; MOCVD; Optical fiber polarization; Optical polarization; Optical pulses; Quantum well devices; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734221
