Title :
Impact of the different nature of interface defect states on the NBTI and 1/f noise of high-k / metal gate pMOSFETs between (100) and (110) crystal orientations
Author :
Sato, Motoyuki ; Sugita, Yoshihiro ; Aoyama, Takayuki ; Nara, Yasuo ; Yuzuru Ohji
Author_Institution :
Semicond. Leading Edge Technol., Inc. (Selete), Tsukuba
Abstract :
We have clarified the difference in NBTI and 1/f noise of high-k/metal gate pMOSFETs between (110) and (100) oriented surfaces. Although the initial interface state density on (110) is higher than that on (100), the NBTI is better on the (110) surface. That is due to the different interface defect nature of interface defect states on (110) surface compared to (100). This difference has a strong impact on 1/f noise.
Keywords :
1/f noise; MOSFET; high-k dielectric thin films; interface states; stability; 1/f noise; NBTI; crystal orientations; high-k dielectric; interface defect states; interface state density; metal gate pMOSFET; negative bias temperature instability; Charge pumps; Degradation; High K dielectric materials; High-K gate dielectrics; Interface states; MOSFETs; Niobium compounds; Semiconductor device noise; Temperature; Titanium compounds;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588565
