Title :
Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics
Author :
Sato, M. ; Umezawa, N. ; Mise, N. ; Kamiyama, S. ; Kadoshima, M. ; Morooka, T. ; Adachi, T. ; Chikyow, T. ; Yamabe, K. ; Shiraishi, K. ; Miyazaki, S. ; Uedono, A. ; Yamada, K. ; Aoyama, T. ; Eimori, T. ; Nara, Y. ; Ohji, Y.
Author_Institution :
Semicond. Leading Edge Technol., Inc. (Selete), Tsukuba
Abstract :
We clarified the impact of the fifth material incorporation into HfSiON technology for Vth control on the reliability of high-k/metal gate stacks CMOSFETs. HfMgSiON is remarkably effective for suppressing electron traps, giving rise to a dramatic PBTI lifetime improvement for nMOSFETs. With pMOSFETs, Al incorporation is effective for the thermal deactivation of hole traps, resulting in NBTI lifetime improvement. We have established the guidelines of material selection to be incorporated into HfSiON for reliability improvement for nMOS and pMOS individually.
Keywords :
CMOS integrated circuits; MOSFET; electron traps; hafnium compounds; high-k dielectric thin films; hole traps; magnesium compounds; semiconductor device reliability; silicon compounds; HfMgSiON; HfSiON; HfSiON gate dielectrics; NBTI lifetime improvement; PBTI lifetime improvement; dual high-k CMOSFET; electron traps suppression; fifth element incorporation; hole traps; nMOSFETs; pMOSFETs; reliability improvement; thermal deactivation; CMOS technology; CMOSFETs; Electron traps; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFETs; Materials reliability; Niobium compounds; Titanium compounds;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588566
