Title :
A monolithic 94 GHz balanced mixer
Author :
Adelseck, B. ; Dieudonne, J.M. ; Schmegner, K.E. ; Colquhoun, A. ; Ebert, G. ; Selders, J.
Author_Institution :
Telefunken Systemech., Ulm, West Germany
Abstract :
On the basis of a recently developed GaAs technology that allows the realization of millimeter-wave Schottky mixer diodes and MESFETs on the same monolithic chip, 94-GHz monolithic mixers have been fabricated. The Schottky diodes show cutoff frequencies of up to 2.3 THz, whereas MESFETs with typical F/sub max/ (MAG=1) of about 90 GHz have been measured. The mixer chips show conversion losses of less than 8 dB combined with noise figures below 6 dB (DSB); the best values are a conversion loss of 7.5 dB with an associated noise figure of 4.0 dB (DSB) in self bias operation. The associated LO power consumption was 5 dBm. The technology allows the integration and mass production of several key components on one chip, which are necessary for millimeter-wave receiver frontends.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; Schottky-barrier diodes; field effect integrated circuits; gallium arsenide; integrated circuit technology; mixers (circuits); radio receivers; 6 to 4 dB; 8 to 7.5 dB; 94 GHz; EHF; GaAs technology; MESFETs; MIMIC; conversion losses; cutoff frequencies; mass production; millimeter-wave Schottky mixer diodes; millimeter-wave receiver frontends; mixer chips; monolithic 94 GHz balanced mixer; noise figures; self bias operation; semiconductors; Cutoff frequency; Frequency measurement; Gallium arsenide; MESFETs; Millimeter wave measurements; Millimeter wave technology; Mixers; Noise figure; Schottky diodes; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99554
