DocumentCode
2413871
Title
Self-sustained pulsation at 65/spl deg/C through reduced carrier overflow in AlGaInP laser diodes
Author
Sawano, H. ; Hotta, H. ; Kobayashi, R. ; Ohsawa, Y. ; Kobayashi, K.
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
257
Lastpage
258
Abstract
Self-sustained pulsation operation of AlGaInP laser diodes at up to 65/spl deg/C was obtained. This was achieved by suppressing the carrier overflow, which was confirmed by analyzing the luminescence change brought about by inducing strain in the wells of the active and saturable-absorbing layers.
Keywords
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; indium compounds; optical films; optical saturable absorption; photoluminescence; quantum well lasers; 65 C; AlGaInP; AlGaInP laser diodes; active quantum well layer strain; luminescence change; reduced carrier overflow; saturable-absorbing layers; self-sustained pulsation; self-sustained pulsation operation; Capacitive sensors; Carrier confinement; Diode lasers; Frequency; Luminescence; Optical feedback; Optical noise; Photonic band gap; Tellurium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734232
Filename
734232
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