Multiwavelength micro-array semiconductor lasers

Densely arrayed (pitch <10 /spl mu/m) semiconductor lasers with individually controlled lasing wavelengths, we call them micro-array semiconductor lasers, were developed as fundamental wavelength-selectable light sources. Over 80-nm eight different wavelengths lasings were achieved from a chip with a laser section 70-/spl mu/m wide and 400-/spl mu/m long. We propose a novel epitaxial growth technique which can form densely arrayed LDs with different wavelengths. This technique is called micro-array selective epitaxy (MASE). The gain peak wavelengths of such microarray LDs can be changed individually over several tens of nanometers.