Using IS modeling to understand the effect of growth conditions and film attributes on AC conduction in CVD diamond

Author

Bataineh, Mohannad M. ; Khatami, Saeid ; Reinhard, D.K. ; Asmussen, Jes, Jr.

Author_Institution

Univ. of West Florida, Pensacola, FL, USA

fYear

2002

fDate

2002

Firstpage

33

Lastpage

41

Abstract

The correlation between the electrical properties, especially conductivity, and film attributes of a wide selection of polycrystalline CVD diamond is investigated using the impedance spectroscopy (IS) modeling technique. Four key film properties, namely (1) the Raman diamond to graphite ratio (Id/Ig), (2) the full-width-at-half-maximum (FWHM) of the diamond Raman signal, (3) the crystalline morphology as quantified by the growth parameter, a, and (4) the average grain size have been considered and related to the films´ conductivities. The electrical properties are also correlated to two deposition parameters, namely substrate temperature and gas flow rate. The effect of test temperature on as-grown and annealed films´ electrical behavior is also considered

Keywords

CVD coatings; Raman spectra; chemical vapour deposition; diamond; electric impedance; electrical conductivity; elemental semiconductors; grain size; semiconductor growth; AC conduction; C; CVD diamond; Raman spectra; average grain size; conductivity; electrical properties correlation; film attributes; growth conditions; impedance spectroscopy modeling; polycrystalline diamond; Conductive films; Conductivity; Crystallization; Electrochemical impedance spectroscopy; Fluid flow; Grain size; Morphology; Substrates; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

SoutheastCon, 2002. Proceedings IEEE

Conference_Location

Columbia, SC

Print_ISBN

0-7803-7252-2

Type

conf

DOI

10.1109/.2002.995553

Filename

995553