An endurance-free ferroelectric random access memory as a non-volatile RAM

Author

Jung, D.J. ; Ahn, W.S. ; Hong, Y.K. ; Kim, H.H. ; Kang, Y.M. ; Kang, J.Y. ; Lee, E.S. ; Ko, H.K. ; Kim, S.Y. ; Jung, W.W. ; Kim, J.H. ; Kang, S.K. ; Jung, J.Y. ; Kim, H.S. ; Choi, D.Y. ; Lee, S.Y. ; Wei, K.H.A. ; Wei, C. ; Jeong, H.S.

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin

fYear

2008

fDate

17-19 June 2008

Firstpage

102

Lastpage

103

Abstract

We demonstrate endurance characteristics of a 1T1C, 64 Mb FRAM in a real-time operational situation. To explore endurance properties in address access time t_AA of 100 ns, we establish a measurement set-up that covers asymmetric pulse-chains corresponding to D1- and D0-READ/RESTORE/WRITE over a frequency range from 1.0 to 7.7 MHz. What has been achieved is that endurance cycles approximate 5.9 times 10²⁴ of cycle times in an operational condition of V_DD = 2.0 V and 85degC in the developed 64 Mb FRAM. Donor concentration due to build-up of oxygen vacancy in a ferroelectric film has also been evaluated to 2.3 times 10²⁰ cm^-3 from I-V-t measurements.

Keywords

carrier density; ferroelectric storage; ferroelectric thin films; random-access storage; FRAM; I-V-t measurements; address access time; asymmetric pulse-chains; donor concentration; endurance cycles; endurance properties; endurance-free ferroelectric random access memory; ferroelectric film; frequency 1.0 MHz to 7.7 MHz; nonvolatile RAM; oxygen vacancy; real-time operational situation; temperature 85 C; voltage 2 V; Capacitors; Ferroelectric films; Ferroelectric materials; Frequency; Nonvolatile memory; Pulse measurements; Random access memory; Read-write memory; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2008 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1802-2

Electronic_ISBN

978-1-4244-1803-9

Type

conf

DOI

10.1109/VLSIT.2008.4588579

Filename

4588579