• DocumentCode
    2414067
  • Title

    Steep channel & Halo profiles utilizing boron-diffusion-barrier layers (Si:C) for 32 nm node and beyond

  • Author

    Hokazono, A. ; Itokawa, H. ; Kusunoki, N. ; Mizushima, I. ; Inaba, S. ; Kawanaka, S. ; Toyoshima, Y.

  • Author_Institution
    Center for Semicond. Res.&Dev., Toshiba Corp., Yokohama
  • fYear
    2008
  • fDate
    17-19 June 2008
  • Firstpage
    112
  • Lastpage
    113
  • Abstract
    Si:C layers under non-doped-Si epitaxial channel (Epi-channel) produces steep channel profile for 25 nm-LG nMOSFET. Si:C layers work as the dopant-diffusion-barriers from the boron doped regions. Moreover, retrograde Halo profiles are also realized in this structure. Steep channel profiles at scaled device are confirmed, and the benefits of its profile at LG of 25 nm are discussed.
  • Keywords
    MOSFET; boron; carbon; diffusion barriers; elemental semiconductors; semiconductor doping; silicon; B; Halo profiles; Si:C; boron-diffusion-barrier layers; dopant-diffusion-barriers; epitaxial channel; size 32 nm; steep channel; Boron; CMOS technology; Capacitance-voltage characteristics; Degradation; Design optimization; Doping; Epitaxial growth; MOSFET circuits; Tensile stress; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2008 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1802-2
  • Electronic_ISBN
    978-1-4244-1803-9
  • Type

    conf

  • DOI
    10.1109/VLSIT.2008.4588583
  • Filename
    4588583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2414067