• DocumentCode
    2414373
  • Title

    Design and demonstration of very high-k (k∼50) HfO2 for ultra-scaled Si CMOS

  • Author

    Migita, S. ; Watanabe, Y. ; Ota, H. ; Ito, H. ; Kamimuta, Y. ; Nabatame, T. ; Toriumi, A.

  • Author_Institution
    MIRAI-AIST, Tsukuba
  • fYear
    2008
  • fDate
    17-19 June 2008
  • Firstpage
    152
  • Lastpage
    153
  • Abstract
    We have demonstrated very high-k (k~50) HfO2 films for ultra-scaled CMOS application. Higher symmetric crystalline structure enables us to achieve higher-k HfO2. We present a feasible method to obtain sub-nm EOT with very high-k HfO2 under actual process conditions, together with an underlying mechanism.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; integrated circuit design; silicon; CMOS; EOT; HfO2; crystalline structure; temperature 50 K; Annealing; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Phase change materials; Photonic band gap; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2008 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1802-2
  • Electronic_ISBN
    978-1-4244-1803-9
  • Type

    conf

  • DOI
    10.1109/VLSIT.2008.4588599
  • Filename
    4588599
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2414373