• DocumentCode
    2414390
  • Title

    Analyses of 5σ Vth fluctuation in 65nm-MOSFETs using takeuchi plot

  • Author

    Tsunomura, T. ; Nishida, A. ; Yano, F. ; Putra, A.T. ; Takeuchi, K. ; Inaba, S. ; Kamohara, S. ; Terada, K. ; Hiramoto, T. ; Mogami, T.

  • Author_Institution
    MIRAI-Selete, Atsugi
  • fYear
    2008
  • fDate
    17-19 June 2008
  • Firstpage
    156
  • Lastpage
    157
  • Abstract
    Using 1M DMA-TEG, the analyses of 5sigma Vth fluctuation in 65 nm-MOSFETs were carried out. Physical and electrical analyses confirmed that random dopant fluctuation is dominant though NMOSFET has larger fluctuation as compared with PMOSFET. To explain this phenomenon, a B clustering model is proposed. In the case of clustering with 5 to 6 B atoms in the channel, Vth fluctuation of NMOSFET can be explained.
  • Keywords
    MOSFET; semiconductor doping; B clustering model; DMA-TEG; NMOSFET; Takeuchi plot; random dopant fluctuation; size 65 nm; Channel bank filters; Equations; Fluctuations; MOSFET circuits; Polynomials; Resource description framework; Semiconductor process modeling; Stress; Vth fluctuation; random dopant fluctuation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2008 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-1802-2
  • Electronic_ISBN
    978-1-4244-1803-9
  • Type

    conf

  • DOI
    10.1109/VLSIT.2008.4588600
  • Filename
    4588600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2414390