Title :
Analyses of 5σ Vth fluctuation in 65nm-MOSFETs using takeuchi plot
Author :
Tsunomura, T. ; Nishida, A. ; Yano, F. ; Putra, A.T. ; Takeuchi, K. ; Inaba, S. ; Kamohara, S. ; Terada, K. ; Hiramoto, T. ; Mogami, T.
Author_Institution :
MIRAI-Selete, Atsugi
Abstract :
Using 1M DMA-TEG, the analyses of 5sigma Vth fluctuation in 65 nm-MOSFETs were carried out. Physical and electrical analyses confirmed that random dopant fluctuation is dominant though NMOSFET has larger fluctuation as compared with PMOSFET. To explain this phenomenon, a B clustering model is proposed. In the case of clustering with 5 to 6 B atoms in the channel, Vth fluctuation of NMOSFET can be explained.
Keywords :
MOSFET; semiconductor doping; B clustering model; DMA-TEG; NMOSFET; Takeuchi plot; random dopant fluctuation; size 65 nm; Channel bank filters; Equations; Fluctuations; MOSFET circuits; Polynomials; Resource description framework; Semiconductor process modeling; Stress; Vth fluctuation; random dopant fluctuation;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588600
