An Efficiency-Enhanced Integrated CMOS Rectifier with Comparator-Controlled Switches for Transcutaneous Powered Implants

Author

Guo, Song ; Lee, Hoi

Author_Institution

Univ. of Texas at Dallas, Richardson

fYear

2007

fDate

16-19 Sept. 2007

Firstpage

385

Lastpage

388

Abstract

This paper presents a high-efficient rectifier for high-current transcutaneous power transmission in biomedical implants. By using comparators to control power nMOS transistors functioning as switches with unidirectional current flow, the rectifier dropout voltage is decreased to improve the power efficiency. The unbalanced biasing scheme in the comparator also minimizes the reverse leakage current. Implemented in a standard 0.35 mum CMOS, the rectifier operates at 1.5 MHz, achieves the peak conversion ratio of 95% and can deliver up to 20 mA output current.

Keywords

AC-DC power convertors; CMOS integrated circuits; field effect transistor switches; prosthetics; rectifying circuits; biomedical implants; comparator controlled switches; dropout voltage; efficiency enhanced; frequency 1.5 MHz; integrated CMOS rectifier; nMOS transistors; peak conversion ratio; reverse leakage current; size 0.35 mum; transcutaneous powered implants; unidirectional current flow; Circuits; Diodes; Implants; Leakage current; MOSFETs; Power transmission; Rectifiers; Regulators; Switches; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2007. CICC '07. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-1623-3

Electronic_ISBN

978-1-4244-1623-3

Type

conf

DOI

10.1109/CICC.2007.4405758

Filename

4405758