Title :
New global shutter CMOS imager with 2 transistors per pixel
Author :
Funaki, Masaki ; Shimizu, Takeshi ; Orihara, Syuji ; Kawanaka, Hiroyuki ; Kurihara, Makoto ; Sato, Hidetoshi ; Katsumata, Noboru ; Oikawa, Munetoshi ; Higuchi, Jun ; Oe, Kensei ; Kuga, Raijiro ; Maki, Kuniko ; Nishibata, Toshihiko
Author_Institution :
Micro-Technol. Center, Victor Co. of Japan Ltd. (JVC), Yokohama
Abstract :
We present a new global shutter CMOS imager with 2 transistors per pixel. The first transistor is a ring gate transistor for accumulating holes that modulate threshold voltage. The second one is a transfer gate transistor that transfers holes from a PD to the ring gate transistor at the same time in all pixels. Simple structure allows us to realize 5.4 um pixel pitch, kTC noise free, and global shutter sensor using 0.35 um technology.
Keywords :
CMOS image sensors; transistors; CMOS imager; global shutter sensor; ring gate transistor; size 0.35 mum; threshold voltage; transfer gate transistor; CMOS image sensors; CMOS technology; Diodes; Manufacturing; Noise shaping; Partial discharges; Pixel; Roentgenium; Threshold voltage; Timing;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588616
