Author :
Han, Jin-Woo ; Ryu, Seong-Wan ; Kim, Sungho ; Kim, Chung-Jin ; Ahn, Jae-Hyuk ; Choi, Sung-Jin ; Choi, Kyu Jin ; Cho, Byung Jin ; Kim, Jin Soo ; Kim, Kwang Hee ; Lee, Gi Sung ; Oh, Jae Sub ; Song, Myong Ho ; Park, Yun Chang ; Kim, Jeoung Woo ; Choi, Yang-K
Abstract :
A FinFET-based unified-RAM (URAM) using the band offset of Si/SiC is demonstrated for the fusion of a non-volatile memory (NVM) and capacitorless 1T-DRAM operation. An oxide/nitride/oxide (O/N/O) gate dielectric and a floating body caused by the band offset are combined in a bulk FinFET to allow two memory operations in a single transistor. The device is fabricated on an epitaxially grown Si/SiC substrate and its process is fully compatible with a conventional bulk FinFET SONOS. Highly reliable NVM and high speed 1T-DRAM operation are confirmed in a single URAM cell.
Keywords :
DRAM chips; MOSFET; SiC; URAM; band offset FinFET; bulk FinFET SONOS; capacitorless 1T-DRAM; multi-functioning NVM; nonvolatile memory; oxide-nitride-oxide gate dielectric; unified-RAM; Degradation; Dielectric substrates; Fabrication; FinFETs; Impact ionization; Nonvolatile memory; SONOS devices; Silicon carbide; Very large scale integration; Voltage;
