Low frequency 1/f noise in graphene FETs

The exceptional properties of graphene create opportunities for application in electronic devices, such as sensor and radio frequency (RF) circuits. In these applications, low frequency noise is a key figure of merit and sometimes a limiting factor in their performance. In this study, we investigate low frequency 1/f noise of top-gate graphene field effect transistors (GFETs) from room temperature down to low temperature. We systematically study the 1/f noise properties and their dependence on carrier density, temperature and channel length.