DocumentCode :
241492
Title :
Revisit resistance monitoring techniques for measuring TSV/Solder resistance during Electromigration test
Author :
Cher Ming Tan ; Narula, Udit
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Kwei-Shan, Taiwan
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
7
Abstract :
TSV and micro-Solder bump are key interconnects for 2.5D and 3D Integrated circuit (IC) chips, and being part of interconnects for IC, their Electromigration reliability must be assessed. However, their resistances are much smaller than that of interconnect lines in IC, and this renders difficulty in having accurate resistance monitoring of TSV and micro-solder bump during their Electromigration tests. In this work, we demonstrated the inappropriateness and inadequacies of the conventional resistance monitoring methods and their manifold improvement in measurement accuracy by mere changing the design of the test structure. The new structure can also reduce the impact of the interconnect lines that lead to the TSV and/or micro-Solder bump on their resistance measurement accuracy.
Keywords :
electric resistance measurement; electromigration; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; solders; three-dimensional integrated circuits; 2.5D integrated circuit chips; 3D integrated circuit chips; IC interconnection lines; TSV-solder resistance measurement; electromigration reliability; electromigration test; microsolder bump; revisit resistance monitoring techniques; test structure; Abstracts; Bridges; Electrical resistance measurement; Monitoring; Reliability; Temperature measurement; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021168
Filename :
7021168
Link To Document :
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