Title :
Effect of TiN capping layer on barrier inhomogeneities for TiSix/Si Schottky diode
Author :
Wu Peng ; Lin-Lin Wang ; Yu-Long Jiang
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
The effect of TiN capping layer on barrier inhomogeneities for TiSix/n-Si Schottky diode is studied by temperature dependent current-voltage (I-V-T) measurements in this paper. The I-V-T curves from 90K to 310K show that the homogeneity of TiSix/n-Si Schottky diode can be obviously influenced by TiN capping layer. A double Gaussian model is employed to characterize the Schottky barrier distribution inhomogenities. It is revealed that the TiN capping layer can degrade the Schottky barrier distribution homogeneity and lower the apparent barrier height of the whole diode.
Keywords :
Gaussian processes; Schottky barriers; Schottky diodes; silicon; titanium compounds; Gaussian model; I-V-T curve; Schottky barrier distribution inhomogeneity; Schottky diode; TiN; TiSix-Si; capping layer; temperature 90 K to 310 K; temperature dependent current-voltage measurement; Abstracts; Nonhomogeneous media;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021176
