Low dielectric constant films deposited by PECVD using tetraethoxysilane and limonene as precursors

Author

Zai-Shang Tan ; Shi-Jin Ding ; Zhong-yong Fan ; Wei Zhang

Author_Institution

Dept. of Mater. Sci., Fudan Univ., Shanghai, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Low-k films were prepared using tetraethoxysilane (TEOS) and limonene (LIMO) as precursors by PECVD and post-deposition annealing, where limonene was used as the source of porogen. The incorporation and removal of porogen caused great changes in the structure and properties of films. The effects of RF power and LIMO/TEOS flow rate ratio on the properties of the prepared films were studied. Under the current experimental conditions, the porous SiOCH film with a k value as low as 2.6 was achieved, together with an extremely low leakage current density of 6.03×10^-9 A/cm² at 1 MV/cm, as well as good mechanical properties.

Keywords

Young´s modulus; annealing; current density; dielectric thin films; leakage currents; oxygen compounds; permittivity; plasma CVD; silicon compounds; LIMO-TEOS flow rate ratio; PECVD; RF power; SiOCH; leakage current density; limonene; low dielectric constant films; low-k films; mechanical properties; porogen; porous film; post-deposition annealing; tetraethoxysilane; Abstracts; Annealing; Films; Mechanical factors; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021187

Filename

7021187