DocumentCode :
241535
Title :
Properties of directly electroplated copper on CoMo alloy diffusion barrier
Author :
Xu Wang ; Hyunsuk Kim ; Xin-Ping Qu
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
The properties of directly electroplated Cu on CoMo alloy diffusion barrier were analyzed by FPP, XRD and SEM. Comparison was made between electroplated Cu on CoMo with and without a seed layer. Also, the self-annealing behaviors of both direct electroplated Cu on CoMo and Cu/CoMo were investigated further. Due to the self-annealing process, the defects of directly electroplated Cu on CoMo are recovered resulting in a less resistance difference value between electrochemical deposited (ECD) Cu on CoMo and ECD Cu on Cu/CoMo.
Keywords :
X-ray diffraction; annealing; cobalt alloys; copper; diffusion barriers; electric resistance; electroplating; metallic thin films; molybdenum alloys; scanning electron microscopy; two-dimensional spectra; CoMo alloy diffusion barrier; Cu-CoMo; FPP; SEM; XRD; directly electroplated copper; electrochemical deposited copper; four-point probe; resistance difference value; seed layer; self-annealing process; Abstracts; Films; Hafnium; Resistance; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021188
Filename :
7021188
Link To Document :
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