Design and optimization of linearly graded field limiting ring termination for high-voltage SiC diodes

Author

Xiaochuan Deng ; Yi Wen ; Xiangdong Wang ; Yongwei Wang ; Yong Wang ; Fei Yang ; Hao Wu ; Bo Zhang

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

An optimized linearly graded field limiting ring (LG-FLR) termination structure for high voltage power 4H-SiC diodes has been presented in this paper. Simulated optimized designs were performed to investigate SiC field limiting ring termination, and determine the optimum guard ring spacing for planar diodes. Simulated results show that the LG-FLR provides a smooth and uniform surface electric field distribution without field spikes. In addition, LG-FLR consumes smaller termination length than conventional FLR structures. Implanted 4H-SiC JBS diodes with optimized guard ring designs were fabricated and results correlated to simulation. Experimental breakdown values of 5 kV for LG-FLR structure with 35 rings were in good agreement with simulated results.

Keywords

Schottky diodes; electric fields; optimisation; power semiconductor diodes; semiconductor device models; wide band gap semiconductors; JBS diodes; LG-FLR termination; SiC; guard ring designs; guard ring spacing; high-voltage diodes; junction barrier Schottky diodes; linearly graded field limiting ring termination; planar diodes; power diodes; surface electric field distribution; voltage 5 kV; Electric fields; Junctions; Limiting; Schottky diodes; Silicon carbide; Structural rings;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021193

Filename

7021193