DocumentCode :
2415455
Title :
Design of very low voltage CMOS rectifier circuits
Author :
Cardoso, Adilson Jair ; Schneider, Márcio Cherem ; Montoro, Carlos Galup
Author_Institution :
Fed. Univ. of Santa Catarina, Florianópolis, Brazil
fYear :
2010
fDate :
13-15 Dec. 2010
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a simple analytical model of the basic rectifier circuit for very low voltage operation based on the Shockley (exponential) law of the diode. The main alternatives for the implementation of diodes in CMOS technologies and the calculation of the equivalent diode parameters for low voltage operation are summarized. The model of the half-wave rectifier for very low voltage is verified with measurements on a circuit built with a 1N4148 diode. The main diode implementations using MOS transistors of a 0.13 μm technology operating in weak inversion are analyzed and a very simple design procedure is suggested.
Keywords :
CMOS integrated circuits; MOSFET; biomedical electronics; integrated circuit design; low-power electronics; rectifiers; semiconductor diodes; 1N4148 diode; MOS transistors; Shockley law; diode implementations; half-wave rectifier; low voltage CMOS rectifier circuits; low voltage operation; simple analytical model; size 0.13 mum; Analytical models; CMOS integrated circuits; Current measurement; Low voltage; MOSFETs; Rectifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems for Medical and Environmental Applications Workshop (CASME), 2010 2nd
Conference_Location :
Merida
Print_ISBN :
978-1-4244-9994-6
Type :
conf
DOI :
10.1109/CASME.2010.5706674
Filename :
5706674
Link To Document :
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