Title :
Tunnel field-effect transistors - update
Author :
Seabaugh, Alan ; Hao Lu
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
Progress in the development of tunnel field-effect transistors (TFETs) is updated. Selected experimental demonstrations and simulations of sub-60-mV/decade TFETs are compared. A universal SPICE model is discussed which allows the unique attributes of the TFET to be represented across material systems and gate geometries to enable circuit design, with the intent of better informing the device development.
Keywords :
SPICE; field effect transistors; semiconductor device models; tunnelling; TFET; circuit design; gate geometry; material system; tunnel field-effect transistor; universal SPICE model; Indium gallium arsenide; Integrated circuit modeling; Logic gates; Silicon; Transistors; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021205
