• DocumentCode
    241565
  • Title

    Tunnel field-effect transistors - update

  • Author

    Seabaugh, Alan ; Hao Lu

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Progress in the development of tunnel field-effect transistors (TFETs) is updated. Selected experimental demonstrations and simulations of sub-60-mV/decade TFETs are compared. A universal SPICE model is discussed which allows the unique attributes of the TFET to be represented across material systems and gate geometries to enable circuit design, with the intent of better informing the device development.
  • Keywords
    SPICE; field effect transistors; semiconductor device models; tunnelling; TFET; circuit design; gate geometry; material system; tunnel field-effect transistor; universal SPICE model; Indium gallium arsenide; Integrated circuit modeling; Logic gates; Silicon; Transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021205
  • Filename
    7021205
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=241565