Title :
Gallium nitride based HEMTs for power applications: High field trapping issues
Author :
Meneghini, Matteo ; Zanoni, Enrico ; Meneghesso, Gaudenzio
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padua, Italy
Abstract :
We review the main physical mechanisms that limit the dynamic performance of GaN-based HEMTs for power applications, exposed to high electric fields. More specifically, we describe: (i) the charge trapping processes responsible for Dynamic-Ron, namely the injection of carriers towards the surface, to the AlGaN/GaN heterostructure, or to the buffer; (ii) the trapping mechanisms related to hot-electrons; (iii) the properties of the point and extended defects responsible for charge trapping in GaN-HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; electric fields; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; charge trapping processes; dynamic performance; dynamic-Ron; high electric fields; high field trapping issues; hot-electrons; main physical mechanisms; power applications; Abstracts; Charge carrier processes; Gallium nitride; Iron; Reliability; Silicon; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021210
