• DocumentCode
    241583
  • Title

    Defect engineering via surfaces for metal-oxide electronics

  • Author

    Seebauer, Edmund G.

  • Author_Institution
    Dept. of Chem. & Biomol. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Recent advances are presented relating to methods for engineering the behavior of point defects in oxide semiconductors like rutile TiO2 and ZnO. Self-diffusion experiments, supported by continuum computations, show that surfaces exert profound effects on defects within the bulk through two distinct mechanisms involving surface chemical bond exchange and electrostatics. Such effects are especially pronounced in confined geometries such as thin films, small particles and nanowires with high surface/volume ratios.
  • Keywords
    point defects; self-diffusion; surface treatment; TiO2; ZnO; continuum computations; defect engineering; metal oxide electronics; oxide semiconductors; point defects; self-diffusion experiments; surface defect; Abstracts; Heating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021214
  • Filename
    7021214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=241583