• DocumentCode
    241584
  • Title

    A comparison of donor mapping techniques using the scanning helium ion microscope and scanning electron microscope

  • Author

    Chee, Augustus

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Nottingham, Ningbo, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Compared to scanning electron microscope (SEM) dopant contrast where energy filtering is required, this paper reports for the first time strong contrast from donor distributions using the scanning helium ion microscope (SHIM) that can be used to map n-type regions at high resolution without the need for energy filtering. The sensitivity limit is about 1017 donors cm-3 if there were no p-type regions. Quantification problems are discussed and suggestions are given including improvements in detector design and lower beam voltage operation for the SHIM as a tool for high spatial resolution dopant characterisation.
  • Keywords
    ion microscopes; scanning electron microscopes; detector design; donor distributions; donor mapping techniques; energy filtering; high-spatial resolution dopant characterisation; low-beam voltage operation; n-type regions; p-type regions; scanning electron microscope; scanning helium ion microscope; Detectors; Doping; Filtering; Image resolution; Scanning electron microscopy; Sensitivity; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021215
  • Filename
    7021215