Title :
Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation
Author :
Xixiang Feng ; Pengpeng Ren ; Zhigang Ji ; Runsheng Wang ; Sutaria, Ketul B. ; Yu Cao ; Ru Huang
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.
Keywords :
hot carriers; minority carriers; reaction-diffusion systems; CVS method; VSS technique; constant voltage stress method; device degradation mechanisms; fast lifetime prediction; hot carrier degradation; hot carrier injection; reaction-diffusion model; voltage step stress technique; wafer-level reliability qualification methodology; Abstracts; Degradation; Educational institutions; Performance evaluation; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021226
