GaN-based LEDs fabricated by ion implantation technology

In this presentation, we will discuss the possibility of using ion implantation technology to enhance output power of GaN-based LEDs. We selectively implanted Ar and/or Si ions into three different substrates (i.e., GaN/sapphire template, flat sapphire substrate with in-situAlN nucleation layer, and flat sapphire substrate withex-situAlN nucleation layer). Using ion implantation, we successfully formed either inverted AlGaN/GaNpyramidal shells or air voids in these samples. It was found that these two structures could both effectively enhance output power of the LEDs. We will show that the ion implantation on flat sapphire substrate is potentially useful to replace patterned sapphire substrate.