Title :
Wide Bandgap SiC power devices
Author :
Chan, Ian ; Yen, C.T. ; Hung, C.C. ; Lee, C.Y.
Author_Institution :
Episil Technol. Inc., Hsinchu, Taiwan
Abstract :
SiC is a promising material for power electronics which can help us to use electricity more convenient and efficient. The adoption of SiC power devices will speed up through the improvement of technology and the reduction of substrate cost.
Keywords :
power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; power electronics; substrate cost reduction; wide bandgap power devices; Electric breakdown; Gallium nitride; Ohmic contacts; Photonic band gap; Schottky diodes; Silicon; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021228
