• DocumentCode
    241610
  • Title

    Wide Bandgap SiC power devices

  • Author

    Chan, Ian ; Yen, C.T. ; Hung, C.C. ; Lee, C.Y.

  • Author_Institution
    Episil Technol. Inc., Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    SiC is a promising material for power electronics which can help us to use electricity more convenient and efficient. The adoption of SiC power devices will speed up through the improvement of technology and the reduction of substrate cost.
  • Keywords
    power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; power electronics; substrate cost reduction; wide bandgap power devices; Electric breakdown; Gallium nitride; Ohmic contacts; Photonic band gap; Schottky diodes; Silicon; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021228
  • Filename
    7021228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=241610