Ti/Al/Au ohmic contacts to p-type 4H-SiC

Author

Chao Han ; YuMing Zhang ; Qingwen Song ; Yimen Zhang ; Xiaoyan Tang ; Hui Guo

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´an, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Ti/Al/Au ohmic contacts to p-type 4H-SiC with different Ti composition are reported. The contact with high Ti content yields a lower specific contact resistivity (ρ_C) of 6.4×10^-5Ωcm², compared with the low-Ti contained contact. The annealed surface morphology and phase products for these contacts are examined by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD) spectra, respectively. These results reveal that rich Ti prevents the large agglomerate grains from the liquid Al during annealing, which is beneficial for interfacial reaction and formation of the ohmic contact.

Keywords

X-ray diffraction; aluminium; annealing; contact resistance; gold; ohmic contacts; scanning electron microscopy; silicon compounds; titanium; wide band gap semiconductors; SEM; SiC; Ti composition; Ti-Al-Au; X-ray diffraction spectra; XRD spectra; annealed surface morphology; interfacial formation; interfacial reaction; ohmic contacts; p-type 4H-SiC; scanning electron microscope; specific contact resistivity; Abstracts; Annealing; Artificial intelligence; Atmospheric measurements; Educational institutions; Electric variables measurement; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021229

Filename

7021229