Title :
Geometrical scaling effects in InP/InGaAs double heterojunction bipolar transistor
Author :
Min Liu ; YuMing Zhang ; Hongliang Lu ; Yimen Zhang ; Jincan Zhang ; Chenghuan Li ; Wei Zhou ; Lifan Wu
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices of China, Xidian Univ., Xi´an, China
Abstract :
The effect of emitter size of InP/InGaAs hetero-junction bipolar transistors (HBTs) on the DC and AC characteristics is investigated. It is found that the gain of the devices decreases with increase in the perimeter to area ratio of the emitter. The cutoff frequency fT varies with different emitter width, and emitter length. The extracted capacitance and the resistance rC are also presented.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device manufacture; semiconductor device testing; HBT; InP-InGaAs; double heterojunction bipolar transistor; emitter length; emitter size; emitter width; geometrical scaling effects; Abstracts; Capacitors; Density measurement; Educational institutions; Indium phosphide; Temperature dependence; Vectors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021230
