Title :
Two-mesa, guard rings assisted two-zone JTE for ultrahigh-voltage(>10kv) 4H-SiC p-i-n diodes
Author :
Yang Ding ; Ruifeng Yue ; Li Zhang ; Yan Wang
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A novel edge termination, referred to as two-mesa, guard rings (gr) assisted two-zone junction termination extension, is presented for ultrahigh-voltage (>10kV) 4H-SiC p-i-n diodes to extend the ultrahigh-voltage (UHV) JTE doping concentration window and increase the breakdown voltage. By device simulation and comparison using Sentaurus® simulator, a diode with UHV of 15450V is designed and the JTE doping concentration window is significantly extended by a ratio of 233.3%.
Keywords :
electric breakdown; p-i-n diodes; semiconductor doping; silicon compounds; Sentaurus simulator; SiC; UHV doping concentration window; breakdown voltage; device simulation; guard rings; junction termination extension; two-mesa; two-zone JTE; ultrahigh-voltage p-i-n diodes; Abstracts; Anodes; Cathodes; Doping; Epitaxial growth; Fabrication; Simulation;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021232
