• DocumentCode
    241620
  • Title

    Enhanced dielectric nonlinearity with controlled domain nucleation in ferroelectric thin films

  • Author

    Anquan Jiang ; Tingao Tang

  • Author_Institution
    Sch. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The dielectric capacitance is always maximum at around a coercive voltage in ferroelectric thin films. When the voltage stressing time is shortened, the maximum capacitance increases quickly in a rate far larger than at other voltages. With this observation, we carried out a delta pulse technique to shorten this voltage stressing time into the order of domain nucleation time so that the voltage tunability can surpass 74%. This high dielectric nonlinearity arises from the longitudinal nucleating domain oscillation confined within the film thickness with matched voltage and time under driving forces of an external stimulating electric field and internal imprint field. Otherwise, the domain oscillation becomes irreversible in accompany with a quick dielectric reduction as the nuclei grow up throughout the whole film thickness. From current-limited switching model of the domains, we can intrigue such a longitudinal domain oscillation at any frequencies with high voltage tunability through the careful control of the circuit RC time constant.
  • Keywords
    capacitance; electric domains; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; PZT; coercive voltage; current-limited switching model; delta pulse technique; dielectric capacitance; dielectric nonlinearity; dielectric reduction; domain nucleation time; electric field; ferroelectric thin films; longitudinal domain oscillation; voltage stressing time; Capacitance; Capacitors; Films; Permittivity; Switches; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021233
  • Filename
    7021233