Multilevel resistive switching in HfOx/TiOx/HfOx/TiOx multilayer-based RRAM with high reliability

Author

Wenjia Ma ; Lifeng Liu ; Yiran Wang ; Zhe Chen ; Bing Chen ; Bin Gao ; Xiaoyan Liu ; Jinfeng Kang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Multilevel cell (MLC) characteristics of HfOx/TiOx/HfOx/TiOx multilayer -based RRAM were studied for the data storage application. The multilevel resistive switching operation was obtained by controlling the reset pulse voltage of the multilayer-based RRAM. We have demonstrated 8-level resistive switching behavior. The reliability of the MLC operation has been examined, about 10⁴ s of data retention at 150 °C is achieved, Sufficient window margin is achieved even the HRS decreases with the increasing temperature from 30 to 150°C.

Keywords

hafnium compounds; integrated circuit reliability; multilayers; resistive RAM; titanium compounds; HfO_x-TiO_x-HfO_x-TiO_x; high reliability RRAM; multilayer based RRAM; multilevel cell; multilevel resistive switching; reset pulse voltage; temperature 150 C; Abstracts; Generators; Hafnium compounds; Reliability; Switches; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021236

Filename

7021236