Investigation of the hot-carrier degradation in Si/SiGe HBT´s by intrinsic low frequency noise source modeling

Author

Borgarino, M. ; Kuchenbecker, J. ; Tartarin, J.G. ; Bary, L. ; Kovacic, T. ; Plana, R. ; Menozzi, R. ; Fantini, F. ; Graffeuil, J.

Author_Institution

Dipt. di Sci. dell´´Ingegneria, Modena Univ., Italy

fYear

2001

fDate

2001

Firstpage

15

Lastpage

20

Abstract

The characterization of the excess low-frequency noise (LFN) properties of electronic devices is a useful tool in the field of reliability physics, because LFN is related to the interactions between charge carriers and material imperfections and defects. The LFN behavior of a bipolar transistor can be described in terms of extrinsic or intrinsic noise sources. The noise representation based on intrinsic noise sources allows more insight, because each source is associated with a particular transistor region. The availability of an intrinsic noise source model therefore allows to locate the degradation occurring during a life test.

Keywords

Ge-Si alloys; bipolar transistors; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device noise; semiconductor device reliability; semiconductor materials; silicon; Si-SiGe; Si/SiGe HBT; bipolar transistor; electronic device; hot carrier degradation; intrinsic low-frequency noise source model; reliability; Bipolar transistors; Charge carriers; Degradation; Germanium silicon alloys; Hot carriers; Life testing; Low-frequency noise; Materials reliability; Physics; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 2001. Proceedings

Print_ISBN

0-7908-0066-7

Type

conf

DOI

10.1109/GAASRW.2001.995726

Filename

995726