Title :
Study on layouts design of the voltage sustaining layer using high-k insulator
Author :
Mingmin Huang ; Xingbi Chen
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices of China, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Three typical layouts of the voltage sustaining layer using high-k (Hk) insulator are compared and studied under the same design conditions. Furthermore, based on the fruits of previous researchers, united approximate expressions for designing these three layouts are given out. According to the theoretical and simulated results, an optimum layout design could be established under a specific design condition, which is very benefit to get a lower specific on-resistance.
Keywords :
high-k dielectric thin films; integrated circuit layout; high-k insulator; optimum layout design; voltage sustaining layer; Abstracts; Materials;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021258
