Title :
Reliability issues in GaAs-based devices for space applications
Author :
Leon, R. ; Okuno, J. ; Ruiz, R. ; Gallegos, M. ; Vu, D.T.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This work describes some of the effects of high humidity and temperature tests undertaken with the 2.5 THz GaAs monolithic membrane-diode mixers (fabricated at the Jet Propulsion Laboratory). Some preliminary results and device characterization performed on GaAs CHFETS under consideration for an upcoming mission´s power system will also be presented.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; semiconductor device reliability; space vehicle electronics; submillimetre wave diodes; submillimetre wave mixers; 2.5 THz; CHFET; GaAs; GaAs device; monolithic membrane diode mixer; power system; reliability; space applications; Biomembranes; Degradation; Diodes; Electrical resistance measurement; Gallium arsenide; Humidity; Ohmic contacts; Temperature; Testing; Transmission line measurements;
Conference_Titel :
GaAs Reliability Workshop, 2001. Proceedings
Print_ISBN :
0-7908-0066-7
DOI :
10.1109/GAASRW.2001.995727
