DocumentCode
2416729
Title
Reliability issues in GaAs-based devices for space applications
Author
Leon, R. ; Okuno, J. ; Ruiz, R. ; Gallegos, M. ; Vu, D.T.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2001
fDate
2001
Firstpage
23
Lastpage
32
Abstract
This work describes some of the effects of high humidity and temperature tests undertaken with the 2.5 THz GaAs monolithic membrane-diode mixers (fabricated at the Jet Propulsion Laboratory). Some preliminary results and device characterization performed on GaAs CHFETS under consideration for an upcoming mission´s power system will also be presented.
Keywords
III-V semiconductors; field effect transistors; gallium arsenide; semiconductor device reliability; space vehicle electronics; submillimetre wave diodes; submillimetre wave mixers; 2.5 THz; CHFET; GaAs; GaAs device; monolithic membrane diode mixer; power system; reliability; space applications; Biomembranes; Degradation; Diodes; Electrical resistance measurement; Gallium arsenide; Humidity; Ohmic contacts; Temperature; Testing; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs Reliability Workshop, 2001. Proceedings
Print_ISBN
0-7908-0066-7
Type
conf
DOI
10.1109/GAASRW.2001.995727
Filename
995727
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